Hot Phonons in a Biased Two-Dimensional InGaAs Channel

High-field transport in two-dimensional graphene

Transport of carriers in two-dimensional graphene at high electric fields is investigated by combining semianalytical and Monte Carlo methods. A semianalytical high-field transport model based on the high rate of optical phonon emission provides useful estimates of the saturation currents in graphene. For developing a more accurate picture, the nonequilibrium (hot) phonon effect and the role of...

InGaP/InGaAs Doped-Channel Direct-Coupled Field-Effect Transistors Logic with Low Supply Voltage

InGaP/InGaAs doped-channel direct-coupled field-effect transistor logic (DCFL) with relatively low supple voltage is demonstrated by two-dimensional analysis. In the integrated enhancement/depletion-mode transistors, subband and two-dimensional electron gas (2DEG) are formed in the InGaAs strain channels, which substantially increase the channel concentration and decrease the drain-to-source sa...

Current-induced forces and hot spots in biased nanojunctions.

We investigate theoretically the interplay of current-induced forces (CIFs), Joule heating, and heat transport inside a current-carrying nanoconductor. We find that the CIFs, due to the electron-phonon coherence, can control the spatial heat dissipation in the conductor. This yields a significant asymmetric concentration of excess heating (hot spot) even for a symmetric conductor. When coupled ...

Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs

The long-term stability of AlGaAs/GaAs and InAlAs/InGaAs high electron mobility transistors (HEMTs), tested under high drain voltage and/or high temperature operation is reported. HEMTs with high In content in the active channel, alternatively fabricated on InP substrates and on GaAs substrates covered by a metamorphic buffer (MHEMT), are compared. Despite the high dislocation density in the bu...

Numerical Investigation of the Structure of Density Currents in a two Dimensional Channel